Home | Home Japanese | Sessions and Keynotes | Author's Info | Download
Program | Social Event | Hotel | Location | Registration
Committee | Sponsors | Contact |JJAP/STAP



2014 4th IEEE International Workshop
on Low Temperature Bonding for 3D Integration
LTB-3D 2014

The University of Tokyo, Hongo, Japan
July 15-16, 2014


WIth resounding success, the 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration was held on July 15th and 16th in the University of Tokyo. The low-temperature bonding is leading to entirely new manufacturing approaches to 3D and heterogeneous integration not only for semiconductor devices and microsystems but also energy systems and power devices. This workshop provided comprehensive information on the latest development and applications, as well as business opportunities, in low-temperature bonding technologies, including surface activated bonding (SAB), new device applications, facilities and technologies for mass-production, and the basic science related to the technologies.

We had distinguish speakers from all over the world and discussed the possibility and future outlook of the low temperature bonding from the point of view of on fundamentals, process, reliability and equipment, production technology, and their applications.

Hereby I would like to express my gratitude to all authors and invited speakers for presenting their latest research results, and all participants for their active cooperation. Special thanks are due to the organizing committee members and company members for their support to ensure the conference is a resounding success. I would like also to acknowledge The IEEE CPMT Society and all cosponsors for their support and cooperation in conducting this workshop successfully.

July 15th 2014, Tokyo


Professor Dr. Tadatomo Suga
The Univeristy of Tokyo
Research committee of 3D Integration by Low-temperature Bonding
IEEE CPMT Society, Japan Chapter




Brief Summary

  • Presentations 63: Keynotes 5, Oral presentations 18, Short & poster presentations 40

  • Participants 210: Japan 184, Oversea 26 from Austria, Canada, China, France, Germany, Korea, Norway, Singapore, Taiwan, UK, USA


Best Presentation Award

  • Yuan-Hsuan Jhang, The University of Tokyo, "InAs/GaAs Quantum Dot Lasers Metal-Stripe-Bonded onto SOI Substrate"
  • H. Kon , Tohoku University, "Room Temperature Bonding of Wafers in Air using Au-Ag Alloy Films"
  • Chia-Chen Kuo, National Chung Hsing University, "Real Time FTIR Spectroscopic and Kinetic Studies of Cu Surface Reduction by Using Formic Acid Vapor"
  • Fengwen Mu, The University of Tokyo, "SiC Wafer Bonding by Modified Surface Activated Bonding Method"


EXCLUSIVE TO REGISTRANTS

  • Proceedings download
  • Presentation materials download
  • Photo Gallery
    The contents on this page are for workshop registrants only.
    Log in with password to access it.